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| Breakover Diodes Applications l l Transient voltage protection High-voltage switches l Crowbar l Lasers l Pulse generators i IH IBO V VH VBO Application Note H - 6 Remark: For special selection of more than 2 pieces IXBOD 1-... for every break down voltage of VBO > 2000 V please contact us. (c) 2000 IXYS All rights reserved H-1 IXBOD 1 -06...10 Single Breakover Diode VBO = 600-1000V IAVM = 0.9 A VBO V 600 50 700 50 800 50 900 50 1000 50 Standard Types IXBOD 1 -06 IXBOD 1 -07 IXBOD 1 -08 IXBOD 1 -09 IXBOD 1 -10 A K Symbol ID VBO IRMS Conditions TVJ = 125C; f = 50 HZ; Ratings V = 0,8x VBO Tamb = 50C 20 A VBO(TVJ) = VBO, 25C [1 + KT (TVJ - 25C)] 1.4 A connection pins soldered to printed circuit (conductor 0,035x2mm) IAVM ISM It Tamb Tstg TVJm KT KP RthJA Weight Symbol IBO IH VH (dv/dt)C (di/dt)C tq(typ) VT V(TO) rT Conditions TVJ = TVJ = TVJ = TVJ = 25C 25C 25C 50C; VD = 0.67*(VBO + 100V) VD = VBO ; IT = 80A; f = 50 Hz Temperatur coefficient of VBO coefficient for energy per pulse EP (material constant) - natural convection - with air speed 2 m/s tp = 0.1 ms; tp = 0.1 ms; Tamb = 50C non repetitive Tamb = 50C 0.9 200 2 -40...+125 -40...+125 125 2*10-3 700 60 45 1 A A A2s C C C K-1 K/Ws K/W K/W g Dimensions in mm (1 mm = 0.0394") Characteristic Values 15 30 4-8 > 1000 200 150 1.7 1.1 0.12 mA mA V V/s A/s s V V K A TVJ = 125C; TVJ = 125C VD = 0.67*VBO ; VR = 0V dV/dt(lin.) = 200V/s; IT = 80A; di/dt = -10A/s TVJ =125C; IT = 5A For power-loss calculations only TVJ = 125C IXYS reserve at these the right to change limits, test conditions and dimensions; Data according to IEC 60747 H-2 (c) 2000 IXYS All rights reserved 030 IXBOD 1 -06...10 Fig. 1 Energy per pulse for trapezoidal current wafeforms (see waveform definition). Fig. 2 Energy per pulse for exponentially decaying current pulse (see waveforms definition). Va = 0 m/s Va = 2 m/s [V] VT TVJ = 125C TVJ = 25C [K/W] ZthJA iT [A] t [s] Fig. 3 On-state voltage (c) 2000 IXYS All rights reserved Fig. 4 Transient thermal resistance. H-3 IXBOD 1 -12R...42R(D) Breakover Diode Modules VBO V 1200 1300 1400 1500 1600 1700 1800 1900 50 50 50 50 50 50 50 50 Standard Types IXBOD 1 -12R(D) IXBOD 1 -13R(D) IXBOD 1 -14R(D) IXBOD 1 -15R(D) IXBOD 1 -16R(D) IXBOD 1 -17R(D) IXBOD 1 -18R(D) IXBOD 1 -19R(D) BOD Elements 2 2 2 2 2 2 2 2 VBO V 2000 50 2100 50 2200 50 2300 50 2400 50 2500 50 2600 100 2800 100 3000 100 3200 100 Version: R Standard Types IXBOD 1 -20R(D) IXBOD 1 -21R(D) IXBOD 1 -22R(D) IXBOD 1 -23R(D) IXBOD 1 -24R(D) IXBOD 1 -25R(D) IXBOD 1 -26R(D) IXBOD 1 -28R(D) IXBOD 1 -30R(D) IXBOD 1 -32R(D) BOD Elements 3 3 3 3 3 3 3 3 3 3 Version: RD VBO V 3400 3600 3800 4000 4200 100 100 100 100 100 Standard Types IXBOD 1 -34R IXBOD 1 -36R IXBOD 1 -38R IXBOD 1 -40R IXBOD 1 -42R BOD Elements 4 4 4 4 4 Symbol ID VBO IRMS Test Conditions TVJ = f = 50 HZ; 125C;V = 0,8x VBO Tamb = 50C 2 BODs 100 2.0 3 BODs 100 1.4 4 BODs 100 1.1 2-3 BODs D-Version 100 0.3 A A VBO(TVJ) = VBO, 25C [1 + KT (TVJ - 25C)] connection pins soldered to printed circuit (conductor 0,035x2mm) IAVM ISM It VT V(TO) rT tp = 0.1 ms; tp = 0.1 ms; Tamb = 50C non repetitive Tamb = 50C 1.25 200 2 3.4 2.2 0.24 0.9 200 2 5.1 3.3 0.36 -40...+125 -40...+125 125 2*10-3 700 20 16 14 0.7 200 2 6.8 4.4 0.48 -40...+125 -40...+125 125 2*10-3 700 20 16 14 3 BODs 15 30 4-8 > 2000 > 2500 200 150 0.2 50 0.125 27 17.5 3 -40...+125 -40...+125 125 2*10-3 700 20 16 14 4 BODs 15 30 4-8 > 3000 > 3500 200 150 A A A2s V V C C C K-1 K/Ws K/W K/W g TVJ =125C; IT = 5A For power-loss calculations only TVJ =125C Tamb -40...+125 Tstg -40...+125 TVJm 125 KT Temperatur coefficient of VBO 2*10-3 KP coefficient for energy per pulse EP (material constant) 700 RthJA Weight Symbol IBO IH VH (dv/dt)C - natural convection - with air speed 2 m/s typical 20 16 14 Test Conditions Characteristic Values both Versions R & RD 2 BODs TVJ = TVJ = TVJ = 25C 25C 25C 15 30 4-8 > 1000 > 1500 200 150 mA mA V V/s V/s V/s V/s V/s V/s A/s s 032 TVJ = 50C; VD = 0.67*(VBO + 100V) - VBO bis 1500V - VBO 1600 - 2000V - VBO 2100 - 2500V - VBO 2600 - 3000V - VBO 3200 - 3400V - VBO 3600 - 4200V TVJ = 125C; VD = VBO ; IT = 80A; f = 50 Hz TVJ = 125C VD = 0.67*VBO ; VR = 0V dv/dt(lin.) = 200V/s; IT = 80A; di/dt = -10A/s (di/dt)C tq(typ) IXYS reserve at these the right to change limits, test conditions and dimensions; Data according to IEC 60747 H-4 (c) 2000 IXYS All rights reserved IXBOD 1 -12R...42R(D) A K K A Dimensions in mm (1 mm = 0.0394") Fig. 5 Energy per pulse for single BOD element for trapezoidal wave current. EP must be multiplied by number of elements for total energy. Fig. 6 Energy per pulse for single BOD element for exponentially decaying current pulse. EP must be multiplied by number of elements for total energy. n = number of BOD-Elements in series [V] VT [K/W] ZthJA Va = 0 m/s Va = 2 m/s iT [A] t [s] Fig. 7 On-state voltage at TVJ = 125C. (c) 2000 IXYS All rights reserved Fig. 8 Transient thermal resistance. H-5 Application Protection of thyristors against overvoltages in forward direction. i VBO (TVJ) = VBO, 25C [1+KT(T VJ - 25C)] Thyristor BOD VD Calculation example a. The maximum junction temperature shall be calculated for a module IXBOD 1 -30R at an ambient temperature Ta = 60 C, an exponentially decaying current ITM = 40A, a pulsewidth tp = 2 s, an operating frequency f = 50 Hz and natural convection. From the diagram Fig. 6 the energy per pulse is obtained: Ep1 = 6 x 10-3 Ws For a module IXBOD1-30R the number of single IXBOD elements is: n=3 At natural air cooling the thermal resistance junction to ambient amounts to (Fig.8): RthJA = 20K/W and the unknown temperature can be calculated as: TVJmax1 = Ta + n * f * Ep * RthJA + Kp * Ep TVJmax1 = 60 + 18 + 4.2 = 82.2C b. If following these steady-state conditions an overload for 1 minute occurs with ITM= 60 A and a pulse-width tp = 4 s at the same operating frequency f = 50 Hz, then the resulting maximum junction temperature is calculating as follows: TVJmax2 = TVJmax1 + (Ep2-Ep1) * n * f *ZthJA(t) + Kp * (Ep2-Ep1) The diagrams Fig. 11 and Fig. 8 show Ep2= 14x10-3 Ws ZthJA(t = 1min) = 12K/W From what follows: TVJmax2 = 82.2 + 14.4 + 5,6 = 102.2 C which is allowed because the maximum admissible junction temperature TVJM = 125 C. H-6 (c) 2000 IXYS All rights reserved Example of a circuit A simple emergency triggering circuit. T R1 D1 D3 D4 : Thyristor : Current limiting resistance (0 - 200 ) : Series-diode (fast recovery diode) : Protection diode : Zener diode, typical VZ : 3-6 V R1 R3 D1 T IXBOD z D4 D3 R2 C2 C3 R 2, C 2 : Protection against parasitic triggering; recommended values: R2 : 100 - 1000 C2 : 22 - 47 nF R 3, C 3 : Snubber network of the thyristor Notice 1. A IXBOD element has a maximum reverse blocking voltage of 10V. 2. For higher reverse voltages a fast, soft recovery diode must be connected in series (Fig. 9). This diode must fulfill the conditions of Fig. 10. 40 A IR 20 10 8 6 4 2 1 0,1 s i IR t tB Fast recovery diode IXBOD single or IXBOD module 1 tB 2 3 5 7 10 Fig. 9 IXBOD protection by a fast recovery diode. Fig. 10 Maximum peak value of the reverse current admissible for a given pulse-width tB, which is required for the suitable fast recovery series-diode. (c) 2000 IXYS All rights reserved H-7 H-8 (c) 2000 IXYS All rights reserved |
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